Research Experience for Undergraduates in Materials for Energy and Sustainability | Boise State University
MIT Technology Review: As microchips become smaller, photolithography, the current technique for producing them, is reaching its limits in terms of complexity and expense. A group of researchers at IBM has demonstrated a process of molecular directed self-assembly that may provide a method for making significantly smaller microchips. By carefully preparing a set of block copolymers, and guiding the molecules' positioning using existing photolithography methods, the team was able to create circuit features that were separated by just 29 nm. Current methods are limited to separations of 80 nm. The potential increase in density of microchip circuitry could lead to much smaller chips and significant advances in processing power.
Science: The Doomsday Clock is maintained by the board of the Bulletin of the Atomic Scientists (BAS) as a representation of how close the world is to a global disaster. On 22 January, BAS executive director Kennette Benedict announced that the organization would be moving the clock hands 2 minutes closer to midnight, setting the symbolic time as 11:57pm. Benedict said that the reasons for the change include the recent stalling in nuclear disarmament talks and the growing threat of climate change. The time change is just the 18th since the clock's creation in 1947. It has ranged from just two minutes to midnight in 1953 to 17 minutes to midnight in 1991.
Associate Director Positions at IBS Center for Theoretical Physics of Complex Systems | Institute for Basic Science (IBS)
Opening the transport gap in graphene by minimizing its width is highly desirable to achieve outstanding switching performance, i.e., the high on/off ratio, in its field effect transistors (FETs). In this letter, we propose a simple method to open a comparable transport gap in graphene by narrowing down it into graphene nanoribbon (GNR) via the conventional nanofabrication procedure. In the process, GNR capped with a 50-nm-wide hydrogen-silsesquioxane mask is trimmed down from the edges by lateral plasma etching. The on/off ratio of the FET device is dramatically enhanced by two orders of magnitude as etching duration increases. The large on/off ratios of ∼47 and ∼105 are achieved at room temperature and 5.4 K, respectively. The electrical measurement reveals a transport gap opening of ∼145 meV in GNR, which corresponds to a resulting width of <10 nm.