| 70. | CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES | |
| 71. | Electronic structure of bulk materials (see section 73 for electronic structure of surfaces, interfaces, low-dimensional structures, and nanomaterials; for electronic structure of superconductors, see 74.25.Jb) | |
| 71.10.-w | Theories and models of many-electron systems | |
| 71.10.Ay | Fermi-liquid theory and other phenomenological models | |
| 71.10.Ca | Electron gas, Fermi gas | |
| 71.10.Fd | Lattice fermion models (Hubbard model, etc.) | |
| 71.10.Hf | Non-Fermi-liquid ground states, electron phase diagrams and phase transitions in model systems | |
| 71.10.Li | Excited states and pairing interactions in model systems | |
| 71.10.Pm | Fermions in reduced dimensions (anyons, composite fermions, Luttinger liquid, etc.) (for anyon mechanism in superconductors, see 74.20.Mn) | |
| S | 71.15.-m | Methods of electronic structure calculations (see also 31.15.−p Calculations and mathematical techniques in atomic and molecular physics) |
| M | 71.15.-m | Methods of electronic structure calculations (see also 31.15.-p Calculations and mathematical techniques in atomic and molecular physics; for electronic structure calculations of superconducting materials, see 74.20.Pq) |
| 71.15.Ap | Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.) | |
| 71.15.Dx | Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction) | |
| 71.15.Mb | Density functional theory, local density approximation, gradient and other corrections | |
| 71.15.Nc | Total energy and cohesive energy calculations | |
| 71.15.Pd | Molecular dynamics calculations (Car-Parrinello) and other numerical simulations | |
| 71.15.Qe | Excited states: methodology (see also 71.10.Li Excited states and pairing interactions in model systems) | |
| 71.15.Rf | Relativistic effects [see also 31.30.J- Relativistic and quantum electrodynamic (QED) effects in atoms, molecules, and ions] | |
| 71.18.+y | Fermi surface: calculations and measurements; effective mass, g factor | |
| 71.20.-b | Electron density of states and band structure of crystalline solids | |
| 71.20.Be | Transition metals and alloys | |
| 71.20.Dg | Alkali and alkaline earth metals | |
| 71.20.Eh | Rare earth metals and alloys | |
| 71.20.Gj | Other metals and alloys | |
| 71.20.Lp | Intermetallic compounds | |
| 71.20.Mq | Elemental semiconductors | |
| 71.20.Nr | Semiconductor compounds | |
| 71.20.Ps | Other inorganic compounds | |
| 71.20.Rv | Polymers and organic compounds | |
| 71.20.Tx | Fullerenes and related materials; intercalation compounds | |
| ... ... ... | Photonic band-gap materials, see 42.70.Qs | |
| 71.22.+i | Electronic structure of liquid metals and semiconductors and their alloys | |
| 71.23.-k | Electronic structure of disordered solids | |
| 71.23.An | Theories and models; localized states | |
| 71.23.Cq | Amorphous semiconductors, metallic glasses, glasses | |
| 71.23.Ft | Quasicrystals | |
| 71.27.+a | Strongly correlated electron systems; heavy fermions | |
| 71.28.+d | Narrow-band systems; intermediate-valence solids (for magnetic aspects, see 75.20.Hr and 75.30.Mb in magnetic properties and materials) | |
| 71.30.+h | Metal-insulator transitions and other electronic transitions | |
| 71.35.-y | Excitons and related phenomena | |
| 71.35.Aa | Frenkel excitons and self-trapped excitons | |
| 71.35.Cc | Intrinsic properties of excitons; optical absorption spectra | |
| 71.35.Ee | Electron-hole drops and electron-hole plasma | |
| 71.35.Gg | Exciton-mediated interactions | |
| 71.35.Ji | Excitons in magnetic fields; magnetoexcitons | |
| 71.35.Lk | Collective effects (Bose effects, phase space filling, and excitonic phase transitions) | |
| 71.35.Pq | Charged excitons (trions) | |
| 71.36.+c | Polaritons (including photon-phonon and photon-magnon interactions) | |
| 71.38.-k | Polarons and electron-phonon interactions (see also 63.20.K- Phonon interactions in lattice dynamics) | |
| 71.38.Cn | Mass renormalization in metals | |
| 71.38.Fp | Large or Fröhlich polarons | |
| 71.38.Ht | Self-trapped or small polarons | |
| 71.38.Mx | Bipolarons | |
| 71.45.-d | Collective effects | |
| 71.45.Gm | Exchange, correlation, dielectric and magnetic response functions, plasmons | |
| 71.45.Lr | Charge-density-wave systems (see also 75.30.Fv Spin-density waves) | |
| 71.55.-i | Impurity and defect levels | |
| 71.55.Ak | Metals, semimetals, and alloys | |
| 71.55.Cn | Elemental semiconductors | |
| 71.55.Eq | III-V semiconductors | |
| 71.55.Gs | II-VI semiconductors | |
| 71.55.Ht | Other nonmetals | |
| 71.55.Jv | Disordered structures; amorphous and glassy solids | |
| 71.60.+z | Positron states (for positron annihilation, see 78.70.Bj) | |
| 71.70.-d | Level splitting and interactions (see also 73.20.-r Surface and interface electron states; 75.30.Et Exchange and superexchange interactions) | |
| 71.70.Ch | Crystal and ligand fields | |
| 71.70.Di | Landau levels | |
| 71.70.Ej | Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect | |
| 71.70.Fk | Strain-induced splitting | |
| 71.70.Gm | Exchange interactions | |
| 71.70.Jp | Nuclear states and interactions | |
| 71.90.+q | Other topics in electronic structure (restricted to new topics in section 71) | |
| S | 72. | Electronic transport in condensed matter (for electronic transport in surfaces, interfaces, and thin films, see section 73; for electrical properties related to treatment conditions, see 81.40.Rs; for transport properties of superconductors, see 74.25.Fy; for electrical properties of tissues and organs, see 87.19.R− in biological physics) |
| M | 72. | Electronic transport in condensed matter (for electronic transport in surfaces, interfaces, and thin films, see section 73; for electrical properties related to treatment conditions, see 81.40.Rs; for transport properties of superconductors, see 74.25.F-; for electrical properties of tissues and organs, see 87.19.R- in biological physics) |
| 72.10.-d | Theory of electronic transport; scattering mechanisms | |
| 72.10.Bg | General formulation of transport theory | |
| 72.10.Di | Scattering by phonons, magnons, and other nonlocalized excitations (see also 71.45.-d Collective effects in electronic structure of bulk materials) | |
| 72.10.Fk | Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect) | |
| 72.15.-v | Electronic conduction in metals and alloys | |
| 72.15.Cz | Electrical and thermal conduction in amorphous and liquid metals and alloys | |
| 72.15.Eb | Electrical and thermal conduction in crystalline metals and alloys | |
| 72.15.Gd | Galvanomagnetic and other magnetotransport effects (see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport) | |
| 72.15.Jf | Thermoelectric and thermomagnetic effects | |
| 72.15.Lh | Relaxation times and mean free paths | |
| 72.15.Nj | Collective modes (e.g., in one-dimensional conductors) | |
| 72.15.Qm | Scattering mechanisms and Kondo effect (see also 75.20.Hr Local moments in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions in magnetic properties and materials) | |
| 72.15.Rn | Localization effects (Anderson or weak localization) | |
| 72.20.-i | Conductivity phenomena in semiconductors and insulators (see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves) | |
| 72.20.Dp | General theory, scattering mechanisms | |
| 72.20.Ee | Mobility edges; hopping transport | |
| 72.20.Fr | Low-field transport and mobility; piezoresistance | |
| 72.20.Ht | High-field and nonlinear effects | |
| 72.20.Jv | Charge carriers: generation, recombination, lifetime, and trapping | |
| 72.20.My | Galvanomagnetic and other magnetotransport effects | |
| 72.20.Pa | Thermoelectric and thermomagnetic effects | |
| S | 72.25.-b | Spin polarized transport (for ballistic magnetoresistance, see 75.47.Jn; for spin polarized transport devices, see 85.75.−d) |
| M | 72.25.-b | Spin polarized transport (for spin polarized transport devices, see 85.75.-d) |
| 72.25.Ba | Spin polarized transport in metals | |
| 72.25.Dc | Spin polarized transport in semiconductors | |
| 72.25.Fe | Optical creation of spin polarized carriers | |
| 72.25.Hg | Electrical injection of spin polarized carriers | |
| 72.25.Mk | Spin transport through interfaces | |
| 72.25.Pn | Current-driven spin pumping | |
| 72.25.Rb | Spin relaxation and scattering | |
| 72.30.+q | High-frequency effects; plasma effects | |
| 72.40.+w | Photoconduction and photovoltaic effects | |
| 72.50.+b | Acoustoelectric effects | |
| S | 72.55.+s | Magnetoacoustic effects (see also 75.80.+q Magnetomechanical and magnetoelectric effects, magnetostriction) |
| M | 72.55.+s | Magnetoacoustic effects (see also 75.80.+q Magnetomechanical effects, magnetostriction) |
| 72.60.+g | Mixed conductivity and conductivity transitions | |
| 72.70.+m | Noise processes and phenomena | |
| 72.80.-r | Conductivity of specific materials (for conductivity of metals and alloys, see 72.15.-v) | |
| 72.80.Cw | Elemental semiconductors | |
| 72.80.Ey | III-V and II-VI semiconductors | |
| 72.80.Ga | Transition-metal compounds | |
| 72.80.Jc | Other crystalline inorganic semiconductors | |
| 72.80.Le | Polymers; organic compounds (including organic semiconductors) | |
| 72.80.Ng | Disordered solids | |
| 72.80.Ph | Liquid semiconductors | |
| 72.80.Rj | Fullerenes and related materials | |
| 72.80.Sk | Insulators | |
| 72.80.Tm | Composite materials | |
| N | 72.80.Vp | Electronic transport in graphene |
| 72.90.+y | Other topics in electronic transport in condensed matter (restricted to new topics in section 72) | |
| 73. | Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (for electronic structure and electrical properties of superconducting films and low-dimensional structures, see 74.78.-w; for computational methodology for electronic structure calculations in condensed matter, see 71.15.-m) | |
| 73.20.-r | Electron states at surfaces and interfaces | |
| 73.20.At | Surface states, band structure, electron density of states | |
| 73.20.Fz | Weak or Anderson localization | |
| 73.20.Hb | Impurity and defect levels; energy states of adsorbed species | |
| 73.20.Jc | Delocalization processes | |
| 73.20.Mf | Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) (for collective excitations in quantum Hall effects, see 73.43.Lp) | |
| 73.20.Qt | Electron solids | |
| 73.21.-b | Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems (for electron states in nanoscale materials, see 73.22.-f) | |
| 73.21.Ac | Multilayers | |
| 73.21.Cd | Superlattices | |
| 73.21.Fg | Quantum wells | |
| 73.21.Hb | Quantum wires | |
| 73.21.La | Quantum dots | |
| S | 73.22.-f | Electronic structure of nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals |
| M | 73.22.-f | Electronic structure of nanoscale materials and related systems |
| 73.22.Dj | Single particle states | |
| 73.22.Gk | Broken symmetry phases | |
| 73.22.Lp | Collective excitations | |
| N | 73.22.Pr | Electronic structure of graphene |
| 73.23.-b | Electronic transport in mesoscopic systems | |
| S | 73.23.Ad | Ballistic transport (see also 75.47.Jn Ballistic magnetoresistance in magnetic properties and materials) |
| M | 73.23.Ad | Ballistic transport |
| 73.23.Hk | Coulomb blockade; single-electron tunneling | |
| 73.23.Ra | Persistent currents | |
| 73.25.+i | Surface conductivity and carrier phenomena | |
| 73.30.+y | Surface double layers, Schottky barriers, and work functions (see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics) | |
| 73.40.-c | Electronic transport in interface structures | |
| 73.40.Cg | Contact resistance, contact potential | |
| 73.40.Ei | Rectification | |
| 73.40.Gk | Tunneling (for tunneling in quantum Hall effects, see 73.43.Jn) | |
| 73.40.Jn | Metal-to-metal contacts | |
| 73.40.Kp | III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions | |
| 73.40.Lq | Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions | |
| 73.40.Mr | Semiconductor-electrolyte contacts | |
| 73.40.Ns | Metal-nonmetal contacts | |
| 73.40.Qv | Metal-insulator-semiconductor structures (including semiconductor-to-insulator) | |
| 73.40.Rw | Metal-insulator-metal structures | |
| 73.40.Sx | Metal-semiconductor-metal structures | |
| 73.40.Ty | Semiconductor-insulator-semiconductor structures | |
| 73.40.Vz | Semiconductor-metal-semiconductor structures | |
| 73.43.-f | Quantum Hall effects | |
| 73.43.Cd | Theory and modeling | |
| 73.43.Fj | Novel experimental methods; measurements | |
| 73.43.Jn | Tunneling | |
| 73.43.Lp | Collective excitations | |
| 73.43.Nq | Quantum phase transitions (see also 64.70.Tg Quantum phase transitions in equations of state, phase equilibria and phase transitions) | |
| 73.43.Qt | Magnetoresistance (see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials) | |
| 73.50.-h | Electronic transport phenomena in thin films (for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b) | |
| 73.50.Bk | General theory, scattering mechanisms | |
| 73.50.Dn | Low-field transport and mobility; piezoresistance | |
| 73.50.Fq | High-field and nonlinear effects | |
| 73.50.Gr | Charge carriers: generation, recombination, lifetime, trapping, mean free paths | |
| 73.50.Jt | Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) | |
| 73.50.Lw | Thermoelectric effects | |
| 73.50.Mx | High-frequency effects; plasma effects | |
| 73.50.Pz | Photoconduction and photovoltaic effects | |
| 73.50.Rb | Acoustoelectric and magnetoacoustic effects | |
| 73.50.Td | Noise processes and phenomena | |
| 73.61.-r | Electrical properties of specific thin films (for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i) | |
| 73.61.At | Metal and metallic alloys | |
| 73.61.Cw | Elemental semiconductors | |
| 73.61.Ey | III-V semiconductors | |
| 73.61.Ga | II-VI semiconductors | |
| 73.61.Jc | Amorphous semiconductors; glasses | |
| 73.61.Le | Other inorganic semiconductors | |
| 73.61.Ng | Insulators | |
| 73.61.Ph | Polymers; organic compounds | |
| 73.61.Wp | Fullerenes and related materials | |
| 73.63.-b | Electronic transport in nanoscale materials and structures (see also 73.23.-b Electronic transport in mesoscopic systems) | |
| 73.63.Bd | Nanocrystalline materials | |
| 73.63.Fg | Nanotubes | |
| 73.63.Hs | Quantum wells | |
| 73.63.Kv | Quantum dots | |
| 73.63.Nm | Quantum wires | |
| 73.63.Rt | Nanoscale contacts | |
| 73.90.+f | Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73) | |
| 74. | Superconductivity (for superconducting devices, see 85.25.-j) | |
| 74.10.+v | Occurrence, potential candidates | |
| 74.20.-z | Theories and models of superconducting state | |
| 74.20.De | Phenomenological theories (two-fluid, Ginzburg-Landau, etc.) | |
| 74.20.Fg | BCS theory and its development | |
| S | 74.20.Mn | Nonconventional mechanisms (spin fluctuations, polarons and bipolarons, resonating valence bond model, anyon mechanism, marginal Fermi liquid, Luttinger liquid, etc.) |
| M | 74.20.Mn | Nonconventional mechanisms |
| N | 74.20.Pq | Electronic structure calculations (for methods of electronic structure calculations, see 71.15.-m) |
| 74.20.Rp | Pairing symmetries (other than s-wave) | |
| S | 74.25.-q | Properties of type I and type II superconductors |
| M | 74.25.-q | Properties of superconductors |
| 74.25.Bt | Thermodynamic properties | |
| 74.25.Dw | Superconductivity phase diagrams | |
| N | 74.25.F- | Transport properties |
| N | 74.25.fc | Electric and thermal conductivity |
| N | 74.25.fg | Thermoelectric effects |
| D | 74.25.Fy | Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) (Use 74.25.F-) |
| 74.25.Gz | Optical properties | |
| S | 74.25.Ha | Magnetic properties |
| M | 74.25.Ha | Magnetic properties including vortex structures and related phenomena (for vortices, magnetic bubbles, and magnetic domain structure, see 75.70.Kw) |
| S | 74.25.Jb | Electronic structure |
| M | 74.25.Jb | Electronic structure (photoemission, etc.) |
| 74.25.Kc | Phonons | |
| S | 74.25.Ld | Mechanical and acoustical properties, elasticity, and ultrasonic attenuation |
| M | 74.25.Ld | Mechanical and acoustical properties, elasticity, and ultrasonic attenuation (see also 43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants—in Acoustics Appendix) |
| N | 74.25.N- | Response to electromagnetic fields |
| N | 74.25.nd | Raman and optical spectroscopy |
| D | 74.25.Nf | Response to electromagnetic fields (nuclear magnetic resonance, surface impedance, etc.) (Use 74.25.N-) |
| N | 74.25.nj | Nuclear magnetic resonance |
| N | 74.25.nn | Surface impedance |
| 74.25.Op | Mixed states, critical fields, and surface sheaths | |
| D | 74.25.Qt | Vortex lattices, flux pinning, flux creep (Use 74.25.Uv) |
| 74.25.Sv | Critical currents | |
| N | 74.25.Uv | Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses) |
| N | 74.25.Wx | Vortex pinning (includes mechanisms and flux creep) |
| D | 74.40.+k | Fluctuations (noise, chaos, nonequilibrium superconductivity, localization, etc.) (Use 74.40.-n) |
| N | 74.40.-n | Fluctuation phenomena |
| N | 74.40.De | Noise and chaos (see also 05.45.-a Nonlinear dynamics and chaos; for noise in general studies of fluctuation phenomena, see 05.40.Ca) |
| N | 74.40.Gh | Nonequilibrium superconductivity |
| N | 74.40.Kb | Quantum critical phenomena |
| S | 74.45.+c | Proximity effects; Andreev effect; SN and SNS junctions |
| M | 74.45.+c | Proximity effects; Andreev reflection; SN and SNS junctions |
| S | 74.50.+r | Tunneling phenomena; point contacts, weak links, Josephson effects (for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa) |
| M | 74.50.+r | Tunneling phenomena; Josephson effects (for SQUIDs, see 85.25.Dq; for Josephson devices, see 85.25.Cp; for Josephson junction arrays, see 74.81.Fa) |
| N | 74.55.+v | Tunneling phenomena: single particle tunneling and STM |
| S | 74.62.-c | Transition temperature variations |
| M | 74.62.-c | Transition temperature variations, phase diagrams |
| S | 74.62.Bf | Effects of material synthesis, crystal structure, and chemical composition |
| M | 74.62.Bf | Effects of material synthesis, crystal structure, and chemical composition (for methods of materials synthesis, see 81.20.-n) |
| S | 74.62.Dh | Effects of crystal defects, doping and substitution |
| M | 74.62.Dh | Effects of crystal defects, doping and substitution (for specific crystal defects, see 61.72.-y) |
| N | 74.62.En | Effects of disorder |
| S | 74.62.Fj | Pressure effects |
| M | 74.62.Fj | Effects of pressure |
| 74.62.Yb | Other effects | |
| S | 74.70.-b | Superconducting materials (for cuprates, see 74.72.−h) |
| M | 74.70.-b | Superconducting materials other than cuprates (for cuprates, see 74.72.-h; for superconducting films, see 74.78.-w) |
| 74.70.Ad | Metals; alloys and binary compounds (including A15, MgB2, etc.) | |
| 74.70.Dd | Ternary, quaternary, and multinary compounds (including Chevrel phases, borocarbides, etc.) | |
| 74.70.Kn | Organic superconductors | |
| 74.70.Pq | Ruthenates | |
| S | 74.70.Tx | Heavy-fermion superconductors |
| M | 74.70.Tx | Heavy-fermion superconductors (for heavy-fermion systems in magnetically ordered materials, see 75.30.Mb; see also 71.27.+a Strongly correlated electron systems, heavy fermions) |
| S | 74.70.Wz | Fullerenes and related materials |
| M | 74.70.Wz | Carbon-based superconductors |
| N | 74.70.Xa | Pnictides and chalcogenides |
| S | 74.72.-h | Cuprate superconductors (high-Tc and insulating parent compounds) |
| M | 74.72.-h | Cuprate superconductors |
| D | 74.72.Bk | Y-based cuprates (Use 74.72.-h) |
| N | 74.72.Cj | Insulating parent compounds |
| D | 74.72.Dn | La-based cuprates (Use 74.72.-h) |
| N | 74.72.Ek | Electron-doped |
| N | 74.72.Gh | Hole-doped |
| D | 74.72.Hs | Bi-based cuprates (Use 74.72.-h) |
| D | 74.72.Jt | Other cuprates, including Tl and Hg-based cuprates (Use 74.72.-h) |
| N | 74.72.Kf | Pseudogap regime |
| 74.78.-w | Superconducting films and low-dimensional structures | |
| D | 74.78.Bz | High-Tc films (Use 74.78.-w) |
| D | 74.78.Db | Low-Tc films (Use 74.78.-w) |
| 74.78.Fk | Multilayers, superlattices, heterostructures | |
| 74.78.Na | Mesoscopic and nanoscale systems | |
| S | 74.81.-g | Inhomogeneous superconductors and superconducting systems |
| M | 74.81.-g | Inhomogeneous superconductors and superconducting systems, including electronic inhomogeneities |
| 74.81.Bd | Granular, melt-textured, amorphous, and composite superconductors | |
| S | 74.81.Fa | Josephson junction arrays and wire networks |
| M | 74.81.Fa | Josephson junction arrays and wire networks (see also 85.25.Cp Josephson devices) |
| 74.90.+n | Other topics in superconductivity (restricted to new topics in section 74) | |
| S | 75. | Magnetic properties and materials (for magnetic properties of quantum solids, see 67.80.dk; for magnetic properties related to treatment conditions, see 81.40.Rs; for magnetic properties of superconductors, see 74.25.Ha; for magnetic properties of rocks and minerals, see 91.60.Pn) |
| M | 75. | Magnetic properties and materials (for magnetic properties of quantum solids, see 67.80.dk; for magnetic properties related to treatment conditions, see 81.40.Rs; for magnetic properties of superconductors, see 74.25.Ha; for magnetic properties of rocks and minerals, see 91.60.Pn; for magnetic properties of nanostructures, see 75.75.-c; for magnetic devices, see 85.70.-w; for magnetoelectronics and spintronics, see 85.75.-d) |
| 75.10.-b | General theory and models of magnetic ordering (see also 05.50.+q Lattice theory and statistics) | |
| S | 75.10.Dg | Crystal-field theory and spin Hamiltonians |
| M | 75.10.Dg | Crystal-field theory and spin Hamiltonians (see also 71.70.Ch Crystal and ligand fields) |
| 75.10.Hk | Classical spin models | |
| S | 75.10.Jm | Quantized spin models |
| M | 75.10.Jm | Quantized spin models, including quantum spin frustration |
| N | 75.10.Kt | Quantum spin liquids, valence bond phases and related phenomena |
| 75.10.Lp | Band and itinerant models | |
| S | 75.10.Nr | Spin-glass and other random models |
| M | 75.10.Nr | Spin-glass and other random models (for spin glasses and other random magnets, see 75.50.Lk) |
| 75.10.Pq | Spin chain models | |
| 75.20.-g | Diamagnetism, paramagnetism, and superparamagnetism | |
| 75.20.Ck | Nonmetals | |
| 75.20.En | Metals and alloys | |
| S | 75.20.Hr | Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions (see also 72.15.Qm Scattering mechanisms and Kondo effect) |
| M | 75.20.Hr | Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions (for Kondo effect and scattering mechanisms in electronic conduction, see 72.15.Qm and 72.10.Fk) |
| D | 75.25.+z | Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source X-ray scattering, etc.) (for devices exploiting spin polarized transport, see 85.75.−d) (Use 75.25.-j) |
| N | 75.25.-j | Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.) (for devices exploiting spin polarized transport, see 85.75.-d) |
| N | 75.25.Dk | Orbital, charge, and other orders, including coupling of these orders |
| S | 75.30.-m | Intrinsic properties of magnetically ordered materials (for critical point effects, see 75.40.−s) |
| M | 75.30.-m | Intrinsic properties of magnetically ordered materials (for critical point effects, see 75.40.-s; for magnetotransport phenomena, see 75.47.-m) |
| 75.30.Cr | Saturation moments and magnetic susceptibilities | |
| 75.30.Ds | Spin waves (for spin-wave resonance, see 76.50.+g) | |
| S | 75.30.Et | Exchange and superexchange interactions (see also 71.70.−d Level splitting and interactions) |
| M | 75.30.Et | Exchange and superexchange interactions (see also 71.70.Gm Exchange interactions) |
| 75.30.Fv | Spin-density waves | |
| 75.30.Gw | Magnetic anisotropy | |
| 75.30.Hx | Magnetic impurity interactions | |
| S | 75.30.Kz | Magnetic phase boundaries (including magnetic transitions, metamagnetism, etc.) |
| M | 75.30.Kz | Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.) (for ferroelectric phase transitions, see 77.80.B-; for superconductivity phase diagrams, see 74.25.Dw) |
| S | 75.30.Mb | Valence fluctuation, Kondo lattice, and heavy-fermion phenomena (see also 71.27.+a Strongly correlated electron systems, heavy fermions) |
| M | 75.30.Mb | Valence fluctuation, Kondo lattice, and heavy-fermion phenomena (see also 71.27.+a Strongly correlated electron systems, heavy fermions; for heavy-fermion superconductors, see 74.70.Tx) |
| S | 75.30.Sg | Magnetocaloric effect, magnetic cooling |
| M | 75.30.Sg | Magnetocaloric effect, magnetic cooling (for cryogenics, see 07.20.Mc) |
| 75.30.Wx | Spin crossover | |
| S | 75.40.-s | Critical-point effects, specific heats, short-range order (see also 65.40.Ba Heat capacity) |
| M | 75.40.-s | Critical-point effects, specific heats, short-range order (for equilibrium properties near critical points, see 64.60.F-; for dynamical critical phenomena, see 64.60.Ht) |
| 75.40.Cx | Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.) | |
| 75.40.Gb | Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.) | |
| 75.40.Mg | Numerical simulation studies | |
| 75.45.+j | Macroscopic quantum phenomena in magnetic systems | |
| S | 75.47.-m | Magnetotransport phenomena; materials for magnetotransport (for spintronics, see 85.75.−d; see also 72.15.Gd, 73.50.Jt, 73.43.Qt, and 72.25.−b in transport phenomena) |
| M | 75.47.-m | Magnetotransport phenomena; materials for magnetotransport (for spintronics, see 85.75.-d; see also 72.25.-b Spin polarized transport; 72.15.Gd Galvanomagnetic and other magnetotransport effects; for magnetotransport effects in thin films, see 73.50.Jt; see also 73.43.Qt Magnetoresistance) |
| 75.47.De | Giant magnetoresistance | |
| 75.47.Gk | Colossal magnetoresistance | |
| D | 75.47.Jn | Ballistic magnetoresistance (Use 75.47.-m) |
| S | 75.47.Lx | Manganites |
| M | 75.47.Lx | Magnetic oxides |
| 75.47.Np | Metals and alloys | |
| 75.47.Pq | Other materials | |
| 75.50.-y | Studies of specific magnetic materials | |
| 75.50.Bb | Fe and its alloys | |
| 75.50.Cc | Other ferromagnetic metals and alloys | |
| 75.50.Dd | Nonmetallic ferromagnetic materials | |
| 75.50.Ee | Antiferromagnetics | |
| 75.50.Gg | Ferrimagnetics | |
| 75.50.Kj | Amorphous and quasicrystalline magnetic materials | |
| 75.50.Lk | Spin glasses and other random magnets | |
| 75.50.Mm | Magnetic liquids | |
| 75.50.Pp | Magnetic semiconductors | |
| S | 75.50.Ss | Magnetic recording materials (see also 85.70.−w Magnetic devices) |
| M | 75.50.Ss | Magnetic recording materials (for magnetic recording devices, see 85.70.Li) |
| 75.50.Tt | Fine-particle systems; nanocrystalline materials | |
| 75.50.Vv | High coercivity materials | |
| S | 75.50.Ww | Permanent magnets |
| M | 75.50.Ww | Permanent magnets (for magnets, see 07.55.Db in instruments) |
| 75.50.Xx | Molecular magnets | |
| S | 75.60.-d | Domain effects, magnetization curves, and hysteresis |
| M | 75.60.-d | Domain effects, magnetization curves, and hysteresis (for dynamics of domain structures, see 75.78.Fg) |
| S | 75.60.Ch | Domain walls and domain structure (for magnetic bubbles, see 75.70.Kw) |
| M | 75.60.Ch | Domain walls and domain structure (for magnetic bubbles and vortices, see 75.70.Kw) |
| S | 75.60.Ej | Magnetization curves, hysteresis, Barkhausen and related effects |
| M | 75.60.Ej | Magnetization curves, hysteresis, Barkhausen and related effects (for hysteresis in ferroelectricity, see 77.80.Dj) |
| 75.60.Jk | Magnetization reversal mechanisms | |
| 75.60.Lr | Magnetic aftereffects | |
| 75.60.Nt | Magnetic annealing and temperature-hysteresis effects | |
| 75.70.-i | Magnetic properties of thin films, surfaces, and interfaces (for magnetic properties of nanostructures, see 75.75.-c) | |
| 75.70.Ak | Magnetic properties of monolayers and thin films | |
| 75.70.Cn | Magnetic properties of interfaces (multilayers, superlattices, heterostructures) | |
| S | 75.70.Kw | Domain structure (including magnetic bubbles) |
| M | 75.70.Kw | Domain structure (including magnetic bubbles and vortices) (for domain structure in ferroelectricity and antiferroelectricity, see 77.80.Dj) |
| 75.70.Rf | Surface magnetism | |
| N | 75.70.Tj | Spin-orbit effects (see also 71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) |
| D | 75.75.+a | Magnetic properties of nanostructures (Use 75.75.-c) |
| N | 75.75.-c | Magnetic properties of nanostructures |
| N | 75.75.Cd | Fabrication of magnetic nanostructures (see also 81.16.-c Methods of micro- and nanofabrication and processing, and 81.07.-b Nanoscale materials and structures: fabrication and characterization) |
| N | 75.75.Fk | Domain structures in nanoparticles |
| N | 75.75.Jn | Dynamics of magnetic nanoparticles |
| N | 75.75.Lf | Electronic structure of magnetic nanoparticles |
| N | 75.76.+j | Spin transport effects (for devices exploiting spin polarized transport, see 85.75.Hh, 85.75.Mm, and 85.75.Ss) |
| N | 75.78.-n | Magnetization dynamics |
| N | 75.78.Cd | Micromagnetic simulations |
| N | 75.78.Fg | Dynamics of domain structures |
| N | 75.78.Jp | Ultrafast magnetization dynamics and switching (for switching phenomena in ferroelectrics, see 77.80.Fm; for ultrafast spectroscopy, see 78.47.J-; for ultrafast processes in optics, see 42.65.Re) |
| S | 75.80.+q | Magnetomechanical and magnetoelectric effects, magnetostriction |
| M | 75.80.+q | Magnetomechanical effects, magnetostriction (for magnetostrictive devices, see 85.70.Ec) |
| ... ... ... | Galvanomagnetic effects, see 72.15.Gd and 72.20.My | |
| ... ... ... | Magnetooptical effects, see 78.20.Ls | |
| N | 75.85.+t | Magnetoelectric effects, multiferroics (for multiferroics and magnetoelectric films, see 77.55.Nv) |
| 75.90.+w | Other topics in magnetic properties and materials (restricted to new topics in section 75) | |
| S | 76. | Magnetic resonances and relaxations in condensed matter, Mössbauer effect |
| M | 76. | Magnetic resonances and relaxations in condensed matter, Mössbauer effect (for magnetic resonance spectrometers, see 07.57.Pt) |
| 76.20.+q | General theory of resonances and relaxations | |
| 76.30.-v | Electron paramagnetic resonance and relaxation (see also 33.35.+r Electron resonance and relaxation in atomic and molecular physics; 87.80.Lg Magnetic and paramagnetic resonance in biological physics) | |
| 76.30.Da | Ions and impurities: general | |
| 76.30.Fc | Iron group (3d) ions and impurities (Ti-Cu) | |
| 76.30.He | Platinum and palladium group (4d and 5d) ions and impurities (Zr-Ag and Hf-Au) | |
| 76.30.Kg | Rare-earth ions and impurities | |
| 76.30.Lh | Other ions and impurities | |
| 76.30.Mi | Color centers and other defects | |
| 76.30.Pk | Conduction electrons | |
| 76.30.Rn | Free radicals | |
| 76.40.+b | Diamagnetic and cyclotron resonances | |
| 76.50.+g | Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance (see also 75.30.Ds Spin waves) | |
| S | 76.60.-k | Nuclear magnetic resonance and relaxation (see also 33.25.+k Nuclear resonance and relaxation in atomic and molecular physics and 82.56.−b Nuclear magnetic resonance in physical chemistry and chemical physics; for structure determination using magnetic resonance techniques, see 61.05.Qr; for biophysical applications, see 87.80.Lg) |
| M | 76.60.-k | Nuclear magnetic resonance and relaxation (see also 33.25.+k Nuclear resonance and relaxation in atomic and molecular physics and 82.56.-b Nuclear magnetic resonance in physical chemistry and chemical physics; for structure determination using magnetic resonance techniques, see 61.05.Qr; for biophysical applications, see 87.80.Lg; for NMR in superconducting materials, see 74.25.nj) |
| 76.60.Cq | Chemical and Knight shifts | |
| 76.60.Es | Relaxation effects | |
| 76.60.Gv | Quadrupole resonance | |
| 76.60.Jx | Effects of internal magnetic fields | |
| 76.60.Lz | Spin echoes | |
| 76.60.Pc | NMR imaging (for medical NMR imaging, see 87.61.-c) | |
| 76.70.-r | Magnetic double resonances and cross effects (see also 33.40.+f Multiple resonances in atomic and molecular physics) | |
| 76.70.Dx | Electron-nuclear double resonance (ENDOR), electron double resonance (ELDOR) | |
| 76.70.Fz | Double nuclear magnetic resonance (DNMR), dynamical nuclear polarization | |
| 76.70.Hb | Optically detected magnetic resonance (ODMR) | |
| 76.75.+i | Muon spin rotation and relaxation | |
| 76.80.+y | Mössbauer effect; other γ-ray spectroscopy (see also 33.45.+x Mössbauer spectra—in atomic and molecular physics; for biophysical applications, see 87.64.kx; for chemical analysis applications, see 82.80.Ej) | |
| 76.90.+d | Other topics in magnetic resonances and relaxations (restricted to new topics in section 76) | |
| 77. | Dielectrics, piezoelectrics, and ferroelectrics and their properties (for conductivity phenomena, see 72.20.-i and 72.80.-r; for dielectric properties related to treatment conditions, see 81.40.Tv) | |
| 77.22.-d | Dielectric properties of solids and liquids (for dielectric properties of tissues and organs, see 87.19.rf) | |
| S | 77.22.Ch | Permittivity (dielectric function) |
| M | 77.22.Ch | Permittivity (dielectric function) (for low-permittivity dielectric films, see 77.55.Bh; for high-permittivity gate dielectric films, 77.55.D-) |
| 77.22.Ej | Polarization and depolarization | |
| 77.22.Gm | Dielectric loss and relaxation | |
| S | 77.22.Jp | Dielectric breakdown and space-charge effects |
| M | 77.22.Jp | Dielectric breakdown and space-charge effects (for dielectric breakdown in gases, see 51.50.+v) |
| D | 77.55.+f | Dielectric thin films (Use 77.55.-g) |
| N | 77.55.-g | Dielectric thin films (see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z) |
| N | 77.55.Bh | Low-permittivity dielectric films |
| N | 77.55.D- | High-permittivity gate dielectric films |
| N | 77.55.df | For silicon electronics |
| N | 77.55.dj | For nonsilicon electronics (Ge, III-V, II-VI, organic electronics) |
| N | 77.55.F- | High-permittivity capacitive films |
| N | 77.55.fb | Paraelectric films |
| N | 77.55.fe | BaTiO3-based films |
| N | 77.55.fg | Pb(Zr,Ti)O3-based films |
| N | 77.55.fj | Niobate- and tantalate-based films |
| N | 77.55.fp | Other ferroelectric films |
| N | 77.55.H- | Piezoelectric and electrostrictive films |
| N | 77.55.hd | AlN |
| N | 77.55.hf | ZnO |
| N | 77.55.hj | PZT |
| N | 77.55.hn | Other piezoelectric or electrostrictive films |
| N | 77.55.Kt | Pyroelectric films |
| N | 77.55.Nv | Multiferroic/magnetoelectric films |
| N | 77.55.Px | Epitaxial and superlattice films |
| 77.65.-j | Piezoelectricity and electromechanical effects | |
| 77.65.Bn | Piezoelectric and electrostrictive constants | |
| S | 77.65.Dq | Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics (see also 43.35.Pt Surface waves in solids and liquids—in Acoustics Appendix; for surface acoustic wave transducers, see 43.38.Rh—in Acoustics Appendix) |
| M | 77.65.Dq | Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics (see also 43.35.Pt Surface waves in solids and liquids—in Acoustics Appendix; for surface acoustic wave transducers, see 43.38.Rh—in Acoustics Appendix; for acousto-optical effects, see 78.20.hb, and 43.35.Sx—in Acoustics Appendix) |
| 77.65.Fs | Electromechanical resonance; quartz resonators | |
| 77.65.Ly | Strain-induced piezoelectric fields | |
| 77.70.+a | Pyroelectric and electrocaloric effects | |
| 77.80.-e | Ferroelectricity and antiferroelectricity | |
| N | 77.80.B- | Phase transitions and Curie point (for Curie point in ferromagnetic materials, see 75.30.Kz) |
| N | 77.80.bg | Compositional effects |
| D | 77.80.Bh | Phase transitions and Curie point (Use 77.80.B-) |
| N | 77.80.bj | Scaling effects |
| N | 77.80.bn | Strain and interface effects |
| S | 77.80.Dj | Domain structure; hysteresis |
| M | 77.80.Dj | Domain structure; hysteresis (for domain structure and hysteresis in ferromagnetic materials, see 75.60.-d) |
| S | 77.80.Fm | Switching phenomena |
| M | 77.80.Fm | Switching phenomena (for ultrafast magnetization dynamics and switching, see 75.78.Jp; for spintronics, see 85.75.-d) |
| N | 77.80.Jk | Relaxor ferroelectrics |
| 77.84.-s | Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials (for nonlinear optical materials, see 42.70.Mp; for dielectric materials in electrochemistry, see 82.45.Un) | |
| 77.84.Bw | Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. | |
| N | 77.84.Cg | PZT ceramics and other titanates |
| D | 77.84.Dy | Niobates, titanates, tantalates, PZT ceramics, etc. (Use 77..8.4.Ek and 77.84.Cg) |
| N | 77.84.Ek | Niobates and tantalates |
| 77.84.Fa | KDP- and TGS-type crystals | |
| 77.84.Jd | Polymers; organic compounds | |
| 77.84.Lf | Composite materials | |
| 77.84.Nh | Liquids, emulsions, and suspensions; liquid crystals (for structure of liquid crystals, see 61.30.-v) | |
| 77.90.+k | Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77) | |
| 78. | Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter | |
| N | 78.15.+e | Optical properties of fluid materials, supercritical fluids and liquid crystals (for reactions in supercritical fluids, see 82.33.De) |
| S | 78.20.-e | Optical properties of bulk materials and thin films (for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70−a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical/infrared radiation effects on biological systems, see 87.50.W−) |
| M | 78.20.-e | Optical properties of bulk materials and thin films (for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w) |
| 78.20.Bh | Theory, models, and numerical simulation | |
| 78.20.Ci | Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) | |
| 78.20.Ek | Optical activity | |
| 78.20.Fm | Birefringence | |
| N | 78.20.H- | Piezo-, elasto-optical effects (for piezoelectric and electromechanical effects, see 77.65.-j) |
| N | 78.20.hb | Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects (see also 43.35.Sx Acousto-optical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography—in Acoustics Appendix; for acousto-optical devices, see 42.79.Jq, and 43.38.Zp—in Acoustics Appendix) |
| N | 78.20.hc | Laser ultrasonics |
| D | 78.20.Hp | Piezo-, elasto-, and acoustooptical effects; photoacoustic effects (Use 78.20.hb) |
| S | 78.20.Jq | Electrooptical effects |
| M | 78.20.Jq | Electro-optical effects (for electro-optical modulators, see 42.79.Hp) |
| S | 78.20.Ls | Magnetooptical effects |
| M | 78.20.Ls | Magneto-optical effects (for magneto-optical devices, see 85.70.Sq) |
| N | 78.20.Mg | Photorefractive effects (see also 42.65.Hw Phase conjugation; photorefractive and Kerr effects; for photorefractive materials, see 42.70.Nq in Optics) |
| N | 78.20.N- | Thermo-optic effects |
| N | 78.20.nb | Photothermal effects (for deep-level photothermal spectroscopy, see 79.10.Ca) |
| N | 78.20.nc | Photopyroelectric effects (for pyroelectric effects, see 77.70.+a) |
| N | 78.20.nd | Thermophotonic effects (see also 79.10.-n Thermoelectronic phenomena) |
| D | 78.20.Nv | Thermooptical and photothermal effects (Use 78.20.N- and 7820nb) |
| N | 78.20.Pa | Photoacoustic effects (see also 78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects; for photoacoustic transducers, see 43.38.Zp—in Acoustics Appendix) |
| S | 78.30.-j | Infrared and Raman spectra (for vibrational states in crystals and disordered systems, see 63.20.−e and 63.50.−x respectively) |
| M | 78.30.-j | Infrared and Raman spectra (for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd) |
| 78.30.Am | Elemental semiconductors and insulators | |
| N | 78.30.C- | Liquids |
| N | 78.30.cb | Organic liquids |
| N | 78.30.cc | Inorganic liquids |
| N | 78.30.cd | Solutions and ionic liquids |
| D | 78.30.Cp | Liquids (Use 78.30.C-) |
| 78.30.Er | Solid metals and alloys | |
| 78.30.Fs | III-V and II-VI semiconductors | |
| 78.30.Hv | Other nonmetallic inorganics | |
| 78.30.Jw | Organic compounds, polymers | |
| 78.30.Ly | Disordered solids | |
| 78.30.Na | Fullerenes and related materials | |
| S | 78.35.+c | Brillouin and Rayleigh scattering; other light scattering (for Raman scattering, see 78.30.−j) |
| M | 78.35.+c | Brillouin and Rayleigh scattering; other light scattering (for Raman scattering, see 78.30.-j; for time resolved light scattering spectroscopy, see 78.47.je) |
| S | 78.40.-q | Absorption and reflection spectra: visible and ultraviolet (for infrared spectra, see 78.30.−j) |
| M | 78.40.-q | Absorption and reflection spectra: visible and ultraviolet (for infrared spectra, see 78.30.-j; for optical spectra of superconductors, see 74.25.nd; for time resolved reflection spectroscopy, see 78.47.jg; for multiphoton absorption, see 79.20.Ws in impact phenomena) |
| 78.40.Dw | Liquids | |
| 78.40.Fy | Semiconductors | |
| 78.40.Ha | Other nonmetallic inorganics | |
| 78.40.Kc | Metals, semimetals, and alloys | |
| 78.40.Me | Organic compounds and polymers | |
| 78.40.Pg | Disordered solids | |
| 78.40.Ri | Fullerenes and related materials | |
| 78.45.+h | Stimulated emission (see also 42.55.-f Lasers) | |
| S | 78.47.-p | Spectroscopy of solid state dynamics (see also 42.65.−k Nonlinear optics; 42.50.−p Quantum optics) |
| M | 78.47.-p | Spectroscopy of solid state dynamics |
| D | 78.47.Cd | Time resolved luminescence (Use 78.47.jd) |
| N | 78.47.D- | Time resolved spectroscopy (>1 psec) |
| N | 78.47.da | Excited states |
| N | 78.47.db | Conduction electrons |
| N | 78.47.dc | Radicals |
| D | 78.47.Fg | Coherent nonlinear optical spectroscopy (Use 78.47.jh) |
| S | 78.47.J- | Ultrafast pump/probe spectroscopy (< 1 psec) (see also 82.53.Eb Pump probe studies of photodissociation; 82.53.Hn Pump probe experiments with bound states in femtochemistry; for ultrafast processes in nonlinear optics, see 42.65.Re) |
| M | 78.47.J- | Ultrafast spectroscopy (<1 psec) (see also 42.65.Re Ultrafast processes; optical pulse generation and pulse compression; 82.53.Mj Femtosecond probing of semiconductor nanostructures) |
| N | 78.47.jb | Transient absorption (see also 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency) |
| D | 78.47.jc | Time resolved spectroscopy (> 1 psec) (Use 78.47.D-) |
| N | 78.47.jd | Time resolved luminescence |
| N | 78.47.je | Time resolved light scattering spectroscopy |
| S | 78.47.jf | Photon echoes |
| M | 78.47.jf | Photon echoes (see also 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency) |
| N | 78.47.jg | Time resolved reflection spectroscopy |
| N | 78.47.jh | Coherent nonlinear optical spectroscopy (see also 42.62.Fi Laser spectroscopy, and 42.65.-k Nonlinear optics) |
| 78.47.jj | Transient grating spectroscopy | |
| S | 78.47.jm | Quantum beats |
| M | 78.47.jm | Quantum beats (see also 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency) |
| S | 78.47.jp | Optical nutation |
| M | 78.47.jp | Optical nutation (see also 42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency) |
| 78.47.js | Free polarization decay | |
| S | 78.47.N- | High resolution nonlinear optical spectroscopy |
| M | 78.47.N- | High resolution nonlinear optical spectroscopy (see also 42.62.Fi Laser spectroscopy, and 42.65.-k Nonlinear optics) |
| 78.47.nd | Hole burning spectroscopy | |
| S | 78.47.nj | Four-wave mixing spectroscopy |
| M | 78.47.nj | Four-wave mixing spectroscopy (for optical mixing and phase conjugation, see 42.65.Hw) |
| S | 78.55.-m | Photoluminescence, properties and materials |
| M | 78.55.-m | Photoluminescence, properties and materials (for time resolved luminescence, see 78.47.jd) |
| 78.55.Ap | Elemental semiconductors | |
| 78.55.Bq | Liquids | |
| 78.55.Cr | III-V semiconductors | |
| 78.55.Et | II-VI semiconductors | |
| 78.55.Fv | Solid alkali halides | |
| 78.55.Hx | Other solid inorganic materials | |
| 78.55.Kz | Solid organic materials | |
| 78.55.Mb | Porous materials | |
| 78.55.Qr | Amorphous materials; glasses and other disordered solids | |
| N | 78.56.-a | Photoconduction and photovoltaic effects (for photoconduction and photovoltaic effects in bulk matter and thin films, see 72.40.+w and 73.50.Pz, respectively; see also 84.60.Jt Photoelectric conversion; for solar cells, see 88.40.H- and 88.40.J- in Solar energy) |
| N | 78.56.Cd | Photocarrier radiometry (see also 72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping) |
| 78.60.-b | Other luminescence and radiative recombination | |
| 78.60.Fi | Electroluminescence | |
| 78.60.Hk | Cathodoluminescence, ionoluminescence | |
| 78.60.Kn | Thermoluminescence | |
| N | 78.60.Lc | Optically stimulated luminescence |
| S | 78.60.Mq | Sonoluminescence, triboluminescence |
| M | 78.60.Mq | Sonoluminescence, triboluminescence (see also 43.35.Hl Sonoluminescence—in Acoustics Appendix) |
| 78.60.Ps | Chemiluminescence (see also 42.55.Ks Chemical lasers) | |
| 78.66.-w | Optical properties of specific thin films (for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m) | |
| 78.66.Bz | Metals and metallic alloys | |
| 78.66.Db | Elemental semiconductors and insulators | |
| 78.66.Fd | III-V semiconductors | |
| 78.66.Hf | II-VI semiconductors | |
| 78.66.Jg | Amorphous semiconductors; glasses | |
| 78.66.Li | Other semiconductors | |
| 78.66.Nk | Insulators | |
| 78.66.Qn | Polymers; organic compounds | |
| 78.66.Sq | Composite materials | |
| 78.66.Tr | Fullerenes and related materials | |
| 78.66.Vs | Fine-particle systems | |
| S | 78.67.-n | Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures |
| M | 78.67.-n | Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures (for magnetic properties of nanostructures, see 75.75.-c; for electronic transport in nanoscale structures, see 73.63.-b; for mechanical properties of nanoscale systems, see 62.25.-g) |
| S | 78.67.Bf | Nanocrystals and nanoparticles |
| M | 78.67.Bf | Nanocrystals, nanoparticles, and nanoclusters |
| 78.67.Ch | Nanotubes | |
| 78.67.De | Quantum wells | |
| 78.67.Hc | Quantum dots | |
| 78.67.Lt | Quantum wires | |
| S | 78.67.Pt | Multilayers; superlattices |
| M | 78.67.Pt | Multilayers; superlattices; photonic structures; metamaterials (see also 81.05.Xj, Metamaterials for chiral, bianisotropic and other complex media) |
| N | 78.67.Qa | Nanorods |
| N | 78.67.Rb | Nanoporous materials |
| N | 78.67.Sc | Nanoaggregates; nanocomposites |
| N | 78.67.Tf | Nanodroplets |
| N | 78.67.Uh | Nanowires |
| N | 78.67.Ve | Nanomicelles |
| N | 78.67.Wj | Optical properties of graphene |
| 78.68.+m | Optical properties of surfaces | |
| 78.70.-g | Interactions of particles and radiation with matter | |
| 78.70.Bj | Positron annihilation (for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics) | |
| 78.70.Ck | X-ray scattering | |
| 78.70.Dm | X-ray absorption spectra | |
| 78.70.En | X-ray emission spectra and fluorescence | |
| 78.70.Gq | Microwave and radio-frequency interactions | |
| 78.70.Nx | Neutron inelastic scattering | |
| N | 78.70.Ps | Scintillation (see also 29.40.Mc, Scintillation detectors) |
| 78.90.+t | Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78) | |
| 79. | Electron and ion emission by liquids and solids; impact phenomena | |
| N | 79.05.+c | Solvated electrons |
| N | 79.10.-n | Thermoelectronic phenomena |
| N | 79.10.Ca | Deep-level photothermal spectroscopy |
| 79.20.-m | Impact phenomena (including electron spectra and sputtering) | |
| 79.20.Ap | Theory of impact phenomena; numerical simulation | |
| 79.20.Ds | Laser-beam impact phenomena | |
| N | 79.20.Eb | Laser ablation |
| S | 79.20.Fv | Electron impact: Auger emission |
| M | 79.20.Fv | Electron impact: Auger emission (for Auger electron spectroscopy, see 82.80.Pv) |
| 79.20.Hx | Electron impact: secondary emission | |
| 79.20.Kz | Other electron-impact emission phenomena | |
| S | 79.20.La | Photon- and electron-stimulated desorption |
| M | 79.20.La | Photon- and electron-stimulated desorption (see also 68.43.Rs Electron stimulated desorption; and 68.43.Tj Photon stimulated desorption) |
| S | 79.20.Mb | Positron emission |
| M | 79.20.Mb | Positron emission (for positron emission tomography, see 87.57.uk) |
| S | 79.20.Rf | Atomic, molecular, and ion beam impact and interactions with surfaces |
| M | 79.20.Rf | Atomic, molecular, and ion beam impact and interactions with surfaces (for atomic and molecular beam techniques, see 37.20.+j; see also 34.35.+a Interactions of atoms and molecules with surfaces) |
| ... ... ... | Channeling, blocking, energy loss of particles, see 61.85.+p | |
| S | 79.20.Uv | Electron energy loss spectroscopy (see also 82.80.Pv Electron spectroscopy in physical chemistry and chemical physics; 34.80.−i Electron and positron scattering in atomic and molecular physics) |
| M | 79.20.Uv | Electron energy loss spectroscopy (see also 82.80.Pv Electron spectroscopy; 34.80.-i Electron and positron scattering) |
| N | 79.20.Ws | Multiphoton absorption (see also 82.50.Pt Multiphoton processes in photochemistry) |
| 79.40.+z | Thermionic emission | |
| S | 79.60.-i | Photoemission and photoelectron spectra |
| M | 79.60.-i | Photoemission and photoelectron spectra (for photoelectron spectroscopy, see 87.64.ks in biological physics; 82.80.Pv in chemical analysis) |
| 79.60.Bm | Clean metal, semiconductor, and insulator surfaces | |
| N | 79.60.Cn | Liquids and liquid surfaces |
| 79.60.Dp | Adsorbed layers and thin films | |
| 79.60.Fr | Polymers; organic compounds | |
| 79.60.Ht | Disordered structures | |
| 79.60.Jv | Interfaces; heterostructures; nanostructures | |
| 79.70.+q | Field emission, ionization, evaporation, and desorption | |
| 79.75.+g | Exoelectron emission | |
| N | 79.77.+g | Coulomb explosion (see also 34.35.+a Interactions of atoms and molecules with surfaces) |
| 79.90.+b | Other topics in electron and ion emission by liquids and solids and impact phenomena (restricted to new topics in section 79) | |