An in-plane gate (IPG) transistor made by scratching a semiconductor surface with the probe of a atomic force microscope (AFM). The scratches subtly influence the behavior of a layer of electrons trapped at a buried interface underneath the surface. The gap between the transistor's source and drain is one micron.
An AFM picture of a single-electron transistor (SET) made in the same way as the IPG transistor. The red region, the island where only single electrons may be admitted, measures 100 x 200 nm.
reported by: Schumacher et al., in the 23 August Applied Physics Letters