Number 36 (Story #1), May 31, 1991 by Phillip F. Schewe and Ben Stein A SUPERCONDUCTING FORM OF GALLIUM-ARSENIDE has been discovered by a group of materials' scientists at the University of California at Berkeley (Eicke R. Weber, 415-642-0446). They grew arsenide-rich layers of GaAs by molecular beam epitaxy carried out at the relatively low temperature of 200 C; they then discovered a superconducting phase, with a transition temperature of 10 K, inside a semi-insulating phase of the material. The Berkeley scientists believe that other superconductive semiconductor compounds may be discovered with even higher transition temperatures, and that "It is now possible, for the first time, to think of combining on the same chip insulating, semiconducting, and superconducting devices, based on epitaxially grown layers. (Upcoming article in Physical Review Letters.)