Transparent organic light emitting diodes using a multilayer oxide as a low resistance transparent cathode
Kyoung Soo Yook, Soon Ok Jeon, Chul Woong Joo, and Jun Yeob Lee
Transparent organic light emitting diodes were developed by using a thermally evaporable WO/Ag/WO (WAW) as a transparent cathode. A thin Ag layer was introduced as an interlayer between the Li doped electron transport layer and the WAW electrode. A high transparency over 80% was obtained and electro ... [Appl. Phys. Lett. 93, 013301 (2008)] published Mon Jul 7, 2008.
Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability
J. B. Yang, T. P. Chen, S. S. Tan, C. M. Ng, and L. Chan
Influence of hydrogen dispersive diffusion in nitrided gate oxide on negative bias temperature instability (NBTI) is examined by using the analytical reaction-dispersive-diffusion (RDD) model, which was developed within a framework of the classical reaction-diffusion model by incorporating the dispe ... [Appl. Phys. Lett. 93, 013501 (2008)] published Mon Jul 7, 2008.
Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector
W. Q. Ma, X. J. Yang, M. Chong, T. Yang, L. H. Chen et al.
We report a bias voltage tunable two-color InAs/GaAs quantum dot infrared photodetector working under the normal incidence infared irradiation. The two-color detection of our device is realized by combining a photovoltaic and a photoconductive response by bias voltage tuning. The photovoltaic respon ... [Appl. Phys. Lett. 93, 013502 (2008)] published Mon Jul 7, 2008.
Transparent organic light emitting diodes using a multilayer oxide as a low resistance transparent cathode
Kyoung Soo Yook, Soon Ok Jeon, Chul Woong Joo, and Jun Yeob Lee
Transparent organic light emitting diodes were developed by using a thermally evaporable WO/Ag/WO (WAW) as a transparent cathode. A thin Ag layer was introduced as an interlayer between the Li doped electron transport layer and the WAW electrode. A high transparency over 80% was obtained and electro ... [Appl. Phys. Lett. 93, 013301 (2008)] published Mon Jul 7, 2008.
Plastic deformation in Al (Cu) interconnects stressed by electromigration and studied by synchrotron polychromatic x-ray microdiffraction
Kai Chen, N. Tamura, B. C. Valek, and K. N. Tu
We report here an in-depth synchrotron radiation based white beam x-ray microdiffraction study of plasticity in individual grains of an Al (Cu) interconnect during the early stage of electromigration (EM). The study shows a rearrangement of the geometrically necessary dislocations (GNDs) in bamboo t ... [J. Appl. Phys. 104, 013513 (2008)] published Mon Jul 7, 2008.
Nanometer strain profiling through Si/SiGe quantum layers
R. M. B. Agaiby, S. H. Olsen, P. Dobrosz, H. Coulson, S. J. Bull et al.
For the first time, nanometer-scale strain resolution is demonstrated using conventional Raman spectroscopy to profile strain through thin epitaxial Si/SiGe layers used as high mobility metal oxide field effect transistor channels. The strained layers were grown using ultrahigh vacuum chemical vapor ... [J. Appl. Phys. 104, 013507 (2008)] published Mon Jul 7, 2008.
Giant piezomagnetism, piezocapacitance, and piezoimpedance effects in MnZn ferrite device under hydrostatic pressure
N. Zhang, X. Fang, and Z. L. Wang
The effects of hydrostatic pressure on the magnetism, capacitance, and impedance of a manganese zinc ferrite device have been investigated. Giant piezomagnetism, piezocapacitance, and piezoimpedance that are independent of skin effects have been observed simultaneously under a pressure of a few mega ... [J. Appl. Phys. 104, 014504 (2008)] published Mon Jul 7, 2008.
Energy transfer in hybrid quantum dot light-emitting diodes
Patrick T. K. Chin, Rifat A. M. Hikmet, and Rene A. J. Janssen
Energy transfer in a host-guest system consisting of a blue-emitting poly(2,7-spirofluorene) (PSF) donor and red-emitting CdSe/ZnS core shell quantum dots (QDs) as acceptor is investigated in solid films, using time-resolved optical spectroscopy, and in electroluminescent diodes. In the QD:PSF compo ... [J. Appl. Phys. 104, 013108 (2008)] published Mon Jul 7, 2008.
Electron-ion interaction in doped conducting polymers
V. N. Prigodin, F. C. Hsu, J. H. Park, O. Waldmann, and A. J. Epstein
The discovery of electric-field effect for conducting polymers in transistor structures aroused a number of questions about structure, mechanism of charge transport, and a role of ions in conducting polymers. We present here the model of an electrochemical transistor whose resistance is governed by ... [Phys. Rev. B 78, 035203 (2008)] published Thu Jul 3, 2008.
Lower limit on the achievable temperature in resonator-based sideband cooling
M. Grajcar, S. Ashhab, J. R. Johansson, and Franco Nori
A resonator with eigenfrequency omega can be effectively used as a cooler for another linear oscillator with a much smaller frequency omega<
Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes
Tao Xiong, Fengxia Wang, Xianfeng Qiao, and Dongge Ma
We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resu ... [Appl. Phys. Lett. 92, 263305 (2008)] published Thu Jul 3, 2008.
Controlled fabrication of single electron transistors from single-walled carbon nanotubes
Paul Stokes and Saiful I. Khondaker
Single electron transistors (SETs) are fabricated by placing single-walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/AlO bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 1215 meV with level spacing of ~5 meV were ... [Appl. Phys. Lett. 92, 262107 (2008)] published Thu Jul 3, 2008.
Cesium hydroxide doped tris-(8-hydroxyquinoline) aluminum as an effective electron injection layer in inverted bottom-emission organic light emitting diodes
Tao Xiong, Fengxia Wang, Xianfeng Qiao, and Dongge Ma
We demonstrate highly efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs) by using cesium hydroxide (CsOH) doped tris-(8-hydroxyquinoline) aluminum (Alq) as the electron injection layer on indium tin oxide cathode, which could significantly enhance the electron injection, resu ... [Appl. Phys. Lett. 92, 263305 (2008)] published Thu Jul 3, 2008.
Red-Emitting LiLa[sub 2]O[sub 2]BO[sub 3]:Sm[sup 3+],Eu[sup 3+] Phosphor for Near-Ultraviolet Light-Emitting Diodes-Based Solid-State Lighting
Yu-Ho Won, Ho Seong Jang, Won Bin Im, and Duk Young Jeon
A red-emitting LiLaOBO:Sm,Eu phosphor has been synthesized and characterized optically for white light-emitting diodes (LEDs). Because the oxyborate group (OBO) can contain high Eu concentration without concentration quenching, LiLaOBO is a suitable host material for red-emitting phosphor for near-u ... [J. Electrochem. Soc. 155, J226 (2008)] published Thu Jul 3, 2008.
Integrated circuits based on nanoscale vacuum phototubes
Gilad Diamant, Erez Halahmi, Leeor Kronik, Jeff Levy, Ron Naaman et al.
We present and experimentally verify a concept for electronic devices based on nanoscale vacuum phototubes. Such devices are expected to be both reliable and amenable to large-scale integration. We further suggest several generalizations of the concept and discuss possible applications and advantage ... [Appl. Phys. Lett. 92, 262903 (2008)] published Wed Jul 2, 2008.
Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments
Sunghoon Song, Woong-Ki Hong, Soon-Shin Kwon, and Takhee Lee
We investigated the passivation effects on the electrical characteristics of ZnO nanowire field effect transistors (FETs) under the various oxygen environments of ambient air, dry O, and vacuum. When the ZnO nanowire FET was exposed to more oxygen, the current decreased and the threshold voltage shi ... [Appl. Phys. Lett. 92, 263109 (2008)] published Wed Jul 2, 2008.
Quantum dot nanocolumn photodetectors for light detection in the infrared
M. Boberl, M. V. Kovalenko, G. Pillwein, G. Brunthaler, and W. Heiss
Colloidal quantum dots absorbing in the infrared are filled into nanoporous alumina membranes to form narrow columns with aspect ratios of 300:1. The columns define the charge carrier path vertical through the ordered pore structure of the membrane. Electrical transport and photocurrent of various q ... [Appl. Phys. Lett. 92, 261113 (2008)] published Wed Jul 2, 2008.
Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors
K. A. Singh, G. Sauve, R. Zhang, T. Kowalewski, R. D. McCullough et al.
The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti/Pt electrodes were investigated as a function of the molecular weight (M) of P3HT. For an increase in M from 5.5 to 11 kDa, the mobility increased from 0.04 to 0.16 cm V s, whereas ... [Appl. Phys. Lett. 92, 263303 (2008)] published Wed Jul 2, 2008.
Three-dimensional magnetic microstructures fabricated by microstereolithography
Kengo Kobayashi and Koji Ikuta
Our group has developed a magnetically modified photocurable polymer for use in microstereolithography to fabricate magnetic microstructures and microactuators having three-dimensionally complex structures. This polymer is prepared by mixing a photocurable polymer with magnetic particles together wi ... [Appl. Phys. Lett. 92, 262505 (2008)] published Wed Jul 2, 2008.
Dependence of field-effect mobility and contact resistance on nanostructure in regioregular poly(3-hexylthiophene) thin film transistors
K. A. Singh, G. Sauve, R. Zhang, T. Kowalewski, R. D. McCullough et al.
The mobility and contact resistance of transistors based on regioregular poly(3-hexylthiophene) (P3HT) with Ti/Pt electrodes were investigated as a function of the molecular weight (M) of P3HT. For an increase in M from 5.5 to 11 kDa, the mobility increased from 0.04 to 0.16 cm V s, whereas ... [Appl. Phys. Lett. 92, 263303 (2008)] published Wed Jul 2, 2008.
High-T[sub c] superconducting quantum interference devices: Status and perspectives
Hong-Chang Yang, Ji-Chen Chen, Kuen-Lin Chen, Chiu-Hsien Wu, Herng-Er Horng et al.
In this paper, an overview of the current status of high-T superconducting quantum interference devices (SQUIDs), from device engineering to biomagnetic applications, is given. The authors offer a description of the current status of SQUID sensors, challenges encountered, and the solution of fabrica ... [J. Appl. Phys. 104, 011101 (2008)] published Wed Jul 2, 2008.
High-T[sub c] superconducting quantum interference devices: Status and perspectives
Hong-Chang Yang, Ji-Chen Chen, Kuen-Lin Chen, Chiu-Hsien Wu, Herng-Er Horng et al.
In this paper, an overview of the current status of high-T superconducting quantum interference devices (SQUIDs), from device engineering to biomagnetic applications, is given. The authors offer a description of the current status of SQUID sensors, challenges encountered, and the solution of fabrica ... [J. Appl. Phys. 104, 011101 (2008)] published Wed Jul 2, 2008.
Simultaneous sensing and actuation with a piezoelectric tube scanner
S. O. Reza Moheimani and Yuen K. Yong
Piezoelectric tube scanners with quartered external electrodes are the most widely used nanopositioning technology in modern scanning probe microscopes. There has been increasing interest in utilizing feedback control techniques to improve bandwidth and accuracy of these nanopositioners. The use of ... [Rev. Sci. Instrum. 79, 073702 (2008)] published Wed Jul 2, 2008.
Consistency of Ground State and Spectroscopic Measurements on Flux Qubits
A. Izmalkov, S. H. W. van der Ploeg, S. N. Shevchenko, M. Grajcar, E. Il'ichev et al.
We compare the results of ground state and spectroscopic measurements carried out on superconducting flux qubits which are effective two-level quantum systems. For a single qubit and for two coupled qubits we show excellent agreement between the parameters of the pseudospin Hamiltonian found using b ... [Phys. Rev. Lett. 101, 017003 (2008)] published Wed Jul 2, 2008.
Top-emitting organic light-emitting diodes with Ba/Ag/indium tin oxide cathode and built-in potential analyses in these devices
J. T. Lim, J. H. Lee, G. Y. Yeom, E. H. Lee, and T. W. Kim
Top-emitting organic light-emitting diodes (TEOLEDs) with a thin semitransparent conducting cathode (STCC) of Ba/Ag/indium tin oxide (ITO) were fabricated and their electric/optical characteristics were investigated. At the wavelength of 520 nm, optical properties of STCC of the Ba(3 nm)/Ag(15 nm ... [J. Vac. Sci. Technol. A 26, 961 (2008)] published Tue Jul 1, 2008.
Optical radiation selective photodetectors based on III nitrides
R. Pillai, D. Starikov, C. Boney, and A. Bensaoula
Wide direct band gap III nitride materials have opened up many new optoelectronic applications because they allow access to a very wide spectral range, from 200 nm to 1.77 [mu]m, from a single material system. Both light emission sources and photodetectors with advanced properties can be achieve ... [J. Vac. Sci. Technol. A 26, 970 (2008)] published Tue Jul 1, 2008.
Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas
D. Y. Kim, H. J. Lee, H. Y. Jung, N.-E. Lee, T. G. Kim et al.
Extreme ultraviolet lithography (EUVL) is currently being examined for its potential use in the next generation of lithography techniques. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics. This study investigated the etching pro ... [J. Vac. Sci. Technol. A 26, 857 (2008)] published Tue Jul 1, 2008.
Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures
C. B. Soh, W. Liu, J. H. Teng, S. Y. Chow, S. S. Ang et al.
Phosphor-free cool white emitting light emitting diodes (LEDs) have been fabricated using a dual stacked InGaN/GaN multiple quantum wells (MQWs) comprising of a lower set of MQWs emitting yellow and an upper set of MQWs emitting blue. The lower set of MQWs incorporates indium-rich InGaN connected-do ... [Appl. Phys. Lett. 92, 261909 (2008)] published Tue Jul 1, 2008.
Monocrystalline Al[sub x]Ga[sub 1 - x]As heterostructures for high-reflectivity high-Q micromechanical resonators in the megahertz regime
Garrett D. Cole, Simon Groblacher, Katharina Gugler, Sylvain Gigan, and Markus Aspelmeyer
We present high-performance megahertz micromechanical oscillators based on freestanding epitaxial AlGaAs distributed Bragg reflectors. Compared with dielectric reflectors, the low mechanical loss of the monocrystalline heterostructure gives rise to significant improvements in the achievable mechanic ... [Appl. Phys. Lett. 92, 261108 (2008)] published Tue Jul 1, 2008.
Enhanced characteristics of blue InGaN/GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length
Ray-Ming Lin, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen, Yung-Hsiang Lin et al.
We have studied the characteristics of blue InGaN/GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the m ... [Appl. Phys. Lett. 92, 261105 (2008)] published Tue Jul 1, 2008.
Optical detection of deoxyribonucleic acid hybridization with InGaN/GaN multiple quantum wells
H. Y. Shih, T. T. Chen, C. H. Wang, K. Y. Chen, and Y. F. Chen
Based on the high surface sensitivity of piezoelectric polarization of strained nitride semiconductors, surface functionalized nitride light emitting devices (LEDs) provide an excellent opportunity for the development of biological sensors. To demonstrate our working principle, a probe chip based on ... [Appl. Phys. Lett. 92, 261910 (2008)] published Tue Jul 1, 2008.