The Industrial Physicis
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American Institute of Physics



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June/July 2003
Volume 9, Number 3


Ion implantation in silicon technology
Ion implantation is the process of doping or otherwise modifying wafers of silicon or other semiconductors by generating an ion beam and steering it into the substrate, so that the ions come to rest beneath the surface. Without implanters, today's high-performing integrated circuits would be impossible---Leonard Rubin and John Poate

Building success into a high-tech start-up
How one organizes a start-up company often proves more important than the product in determining whether the venture succeeds or fails.  "I would rather have a first-rate management team with average technology than a first-rate technology with a second-rate management team"---John T. Preston

Hybrid semiconductor-molecular nanoelectronics
These circuits combine a level of advanced complementary metal-oxide semiconductor devices fabricated by lithographic patterning; a few layers of parallel nanowire arrays formed, for example, by nanoimprinting; and a level of molecular devices that would self-assemble on the nanowires from solution---Konstantin Likharev

Tunable lasers and fiber-Bragg-grating sensors
Tunable lasers used as the optical source in a fiber-Bragg grating sensing system can be employed as strain-gage sensors in buildings, bridges, and airplane bodies; for depth measurements in streams, rivers, and reservoirs; and for temperature and pressure measurements in deep oil wells---Mark Wippich and Kathy Li Dessau


Briefs: Subfemtosecond control; turbulent secrets; micromachines in vacuum; fluid nanostructuring

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