Fructose film tested as a natural, nonvolatile resistive switching layer

Non-volatile memory, which can store data permanently without a power supply, is necessary for the neuromorphic computing characteristics of biocompatible electronics. Xing et al. have investigated the use of a monosaccharide fructose film as the resistive switching layer in this technology.

Resistive random-access memory, or RRAM, consists of an active switching layer between two metals. RRAMs provide good data retention, fast switching speeds, 3D integration capabilities, and long endurance in simple structures that require low power consumption and low fabrications costs.

Hardware components made from bio-organic materials are desirable for the RRAMs used in wearable electronics and implantable personal health systems. Natural materials previously found to exhibit resistive switching properties include polysaccharides and some proteins, viruses, and plant extracts.

The authors compared the switching behavior of the monosaccharide, fructose, in thin film RRAMs with aluminum and silver top electrodes. The results showed highly reproducible resistive switching behaviors along with good data retention and high endurance capabilities.

“The use of fructose enables the RRAM device to be renewable and sustainable with degradable and environmentally friendly disposals,” said study author Feng Zhao.

The authors are continuing to investigate memory and learning functions of the fructose RRAM. Technological challenges remain in the development of bio-organic resistive memory and artificial synaptic devices at a nanometer-sized scale.

“We are developing advanced nanofabrication techniques to address these challenges,” said Zhao.

Source: “Nonvolatile resistive switching memory based on monosaccharide fructose film,” by Yuan Xing, Brandon Sueoka, Kuan Yew Cheong, and Feng Zhao, Applied Physics Letters (2021). This article may be accessed https://doi.org/10.1063/5.0067453 .